july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series tisp4070j3bj thru tisp4395j3bj bidirectional thyristor overvoltage protectors ion-implanted breakdown region -precise and stable voltage -low voltage overshoot under surge designed for transformer center tap (ground return) overvoltage protection -enables gr-1089-core compliance -high holding current allows protection of data lines with d.c. power feed can be used to protect rugged modems designed for exposed applications exceeding tia-968-a the range of tisp4xxxj3bj devices are designed to limit overvoltages on telecom lines. the tisp4xxxj3bj is primarily designed to address gr-1089-core compliance on data transmission lines with d.c. power feeding. when overvoltage protection is applied to transform er coupled lines from the transformer center tap to ground, the total ground return current can be 200 a, 10/1000 and 1000 a, 2/10. the high 150 ma holding current is set above common d.c. feed system levels to allow the tisp4xxxj3bj to reset following a disturbance. these devices allow signal voltages, without clipping, up to the maximum off-state voltage value, v drm , see figure 1. voltages above v drm are limited and will not exceed the breakover voltage, v (bo) , level. if suf cient current ows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. when the diverted current fa lls below the holding current, i h , level the devices switches off and restores normal system operation. rated for international surge wave shapes .................................................ul recognized component *rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. device package carrier marking code std. qty. tisp4xxxj3bj smb (do-214aa) embossed tape reeled tisp4xxxj3bjr-s 4xxxj3 3000 insert xxx value corresponding to device name. order as *rohs compliant smb package (top view) device symbol description how to order device name v drm v v (bo) v tisp4070j3bj 58 70 tisp4080j3bj 65 80 tisp4095j3bj 75 95 tisp4115j3bj 90 115 tisp4125j3bj 100 125 tisp4145j3bj 120 145 tisp4165j3bj 135 165 tisp4180j3bj 145 180 TISP4200J3BJ 155 200 tisp4219j3bj 180 219 tisp4250j3bj 190 250 tisp4290j3bj 220 290 tisp4350j3bj 275 350 tisp4395j3bj 320 395 md-smb-004-a t r1 2 t r sd-tisp4xxx-001-a wave shape standard i ppsm a 2/10 gr-1089-core 1000 8/20 iec 61000-4-5 800 10/160 tia-968-a 400 10/700 itu-t k.20/21/45 350 10/560 tia-968-a 250 10/1000 gr-1089-core 200
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. t i d n o c t s e t r e t e m a r a p t i n u x a m p y t n i m s n o i i drm repetitive peak off-state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) ac breakover voltage dv/dt = 250 v/ms, r source = 300 ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj 70 80 95 115 125 145 165 180 200 219 250 290 350 395 v t i n u e u l a v l o b m y s g n i t a r repetitive peak of f-state voltage ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj v drm 58 65 75 90 100 120 135 145 155 180 190 220 275 320 v non-repetitive peak impulse current (see notes 1 and 2) 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 svoltage wave shape) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 4/250 s (itu-t k.20/21, 10/700 s voltage waveshape, simultaneous) 5/310 s (itu-t k.20/21, 10/700 s voltage wave shape, single) 5/320 s (tia-968-a, 9/720 s voltage waveshape, single) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) i ppsm 1000 800 400 370 350 350 250 200 a non-repetitive peak on-state current (see notes 1 and 2) i tsm 50 a 20 ms, 50 hz (full sine wave) initial rate of rise of on-sta i d a 0 5 < e u l a v p m a r m u m i x a m . p m a r t n e r r u c r a e n i l . t n e r r u c e t t /dt 800 a/s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially the device must be in thermal equilibrium with t j = 25 c. 2. these non-repetitive rated currents are peak values of either polarity. the surge may be repeated after the device returns t o its initial conditions. tisp4xxxj3bj overvoltage protector series absolute maximum ratings, t a = 25 ? (unless otherwise noted) electrical characteristics, t a = 25 ? (unless otherwise noted)
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series electrical characteristics, t a = 25 ? (unless otherwise noted) thermal characteristics v (bo) ramp breakover voltage dv/dt 1000 v/s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/s, linear current ramp, maximum ramp value = 10 a ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj 77 88 104 125 135 156 177 192 212 231 263 303 364 409 v i (bo) breakover current dv/dt = 250 v/ms, r source =300 ?4070j3bj thru ?4115j3bj 900 ma ?4125j3bj thru ?4219j3bj 800 ?4250j3bj thru ?4395j3bj 600 i h holding current i t a m 0 0 6 0 5 1 s m / a m 0 3 = t d / i d , a 5 = dv/dt critical rate of rise of off-state voltage linear voltage ramp maximum ramp value < 0.85v drm 5 kv/s i d off-state current v d t v 0 5 = a = 85 c 10 a c o off-state capacitance f = 1 mhz, v d = 1 v rms, v d = 0 ?4070j3bj thru ?4115j3bj 195 235 pf ?4125j3bj thru ?4219j3bj 120 145 ?4250j3bj thru ?4395j3bj 105 125 f = 1 mhz, v d = 1 v rms, v d = -1 v ?4070j3bj thru ?4115j3bj 180 215 ?4125j3bj thru ?4219j3bj 110 132 ?4250j3bj thru ?4395j3bj 95 115 f = 1 mhz, v d = 1 v rms, v d = -2 v ?4070j3bj thru ?4115j3bj 165 200 ?4125j3bj thru ?4219j3bj 100 120 ?4250j3bj thru ?4395j3bj 90 105 f = 1 mhz, v d = 1 v rms, v d = -50 v ?4070j3bj thru ?4115j3bj 85 100 ?4125j3bj thru ?4219j3bj 50 60 ?4250j3bj thru ?4395j3bj 42 50 f = 1 mhz, v d = 1 v rms, v d = -100 v (see note 3) ?4125j3bj thru ?4219j3bj 40 50 ?4250j3bj thru ?4395j3bj 35 40 note: 3. to avoid possible clipping, the tisp4125j3bj is tested with v d = -98 v. t i d n o c t s e t r e t e m a r a p t i n u x a m p y t n i m s n o i t i n u x a m p y t n i m s n o i t i d n o c t s e t r e t e m a r a p r ja junction to ambient thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) (see note 4) 90 c/w note: 4. eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series parameter measurement information -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal pm-tisp4xxx-001-a
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series typical characteristics . 3 e r u g i f . 2 e r u g i f . 5 e r u g i f . 4 e r u g i f off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - ? 0 001 0?1 0 1 1 10 100 tc4jag v d = ?0 v normalized breakover voltage vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4jaf normalized holding current vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4jad normalized capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100 150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 ? v d = 1 vrms tc4jabb
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series rating and thermal characteristics . 7 e r u g i f . 6 e r u g i f non-repetitive peak on-state current vs current duration t - current duration - s 0? 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 2 3 4 5 6 7 8 9 15 20 30 40 10 ti4jaa v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 ? v drm derating factor vs minimum ambient temperature t a(min) - minimum ambient temperature - ? -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4jadca '4070j3bj thru '4115j3bj '4125j3bj thru '4219j3bj '4250j3bj thru '4395j3bj
july 2003 - revised november 2013 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. tisp4xxxj3bj overvoltage protector series ?isp?is a registered trademark of bourns ltd., a bourns company, in the united states and other countries, except that ?isp is a registered trademark of bourns, inc. in china.?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. applications information figure 8. typical application circuit figure 9. typical application circuit ai4mmabb r t ring detector hook switch polarity bridge relay dc sink signal c1 tisp 4350j3bj th1 high current fuse f1 r1 d5 d6 d7 oc1 protection d1 d2 d3 d4 isolation barrier t1 c2 r2 c3 ai4mmab tx tisp4350j3bj t f1a r f1b rx t f2a r f2b f1 & f2 = b1250t tisp4350j3bj d.c. feed
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